1500 V AlGaN/GaN MIS-HEMTs Employing LPCVD-Si3N4 as Gate Insulator

分类： 材料科学 >> 纳米科学和纳米技术 提交时间： 2016-12-22

Zhili Zhang Guohao Yu Xiaodong Zhang Shuxin Tan Dongdong Wu Kai Fu Wei Huang Yong Cai Baoshun Zhang

摘要： An AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates was obtained with 18 nm Si3N4 grown by low pressure chemical vapor deposition (LPCVD) as gate insulator, The MIS-HEMTs show high Idss of 16.8 A@Vg=3 V, high breakdown voltage of 600 V and a low specific on-resistance of 2.3. The power device figure of merit V2BV/Ron=157MW·cm-2. Furthermore, the good insulation effects of LPCVD-Si3N4 were also demonstrated by the low gate leakage current of below Ig=154 nA@Vds=600 V and Vgs=-14 V. The high Idss, low specific on-resistance and high breakdown voltage show the potential and advantages of GaN MIS-HEMTs for power switching applications.

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